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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPB50R250CPATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 500 V; Maximum Drain-Source On Resistance: .25 ohm; Package Style (Meter): SMALL OUTLINE; |
| Datasheet | IPB50R250CPATMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 13 A |
| Maximum Pulsed Drain Current (IDM): | 31 A |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .25 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 345 mJ |
| Other Names: |
IPB50R250CP SP000236093 ROCINFIPB50R250CPATMA1 IPB50R250CP-ND IPB50R250CPATMA1TR 2156-IPB50R250CPATMA1 |
| JEDEC-95 Code: | TO-263AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 500 V |
| Qualification: | Not Qualified |
