IPB60R520CPATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB60R520CPATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 17 A;
Datasheet	IPB60R520CPATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6.8 A
Maximum Pulsed Drain Current (IDM):	17 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.52 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	166 mJ
Other Names:	IPB60R520CPTR-ND IPB60R520CPATMA1TR IPB60R520CPDKR-ND IPB60R520CPATMA1DKR IPB60R520CPDKR IPB60R520CP SP000405868 IPB60R520CPATMA1CT IPB60R520CPCT IPB60R520CPCT-ND IPB60R520CP-ND
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified

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