Infineon Technologies - IPB65R190CFDATMA2

IPB65R190CFDATMA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB65R190CFDATMA2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 650 V; Transistor Element Material: SILICON;
Datasheet IPB65R190CFDATMA2 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 17.5 A
Maximum Pulsed Drain Current (IDM): 57.2 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .19 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 484 mJ
Other Names: 448-IPB65R190CFDATMA2TR
448-IPB65R190CFDATMA2CT
448-IPB65R190CFDATMA2DKR
SP001977038
IPB65R190CFDATMA2-ND
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 650 V
Maximum Drain Current (Abs) (ID): 17.5 A
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