IPB65R420CFDATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB65R420CFDATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.7 A; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
Datasheet	IPB65R420CFDATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8.7 A
Maximum Pulsed Drain Current (IDM):	27 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.42 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	227 mJ
Other Names:	IPB65R420CFDCT-ND IPB65R420CFDATMA1DKR 2156-IPB65R420CFDATMA1-ITTR IPB65R420CFDTR-ND IPB65R420CFD-ND IPB65R420CFD SP000890680 IPB65R420CFDATMA1-ND IPB65R420CFDATMA1TR IPB65R420CFDCT IPB65R420CFDDKR-ND IFEINFIPB65R420CFDATMA1 IPB65R420CFDATMA1CT IPB65R420CFDDKR
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	650 V

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