IPB80N03S4L02ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB80N03S4L02ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ULTRA LOW RESISTANCE; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-263AB;
Datasheet	IPB80N03S4L02ATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	80 A
Maximum Pulsed Drain Current (IDM):	320 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0024 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	260 mJ
Other Names:	IPB80N03S4L-02INDKR-ND IPB80N03S4L-02INTR-ND IPB80N03S4L-02INCT IPB80N03S4L02ATMA1TR IPB80N03S4L-02INCT-ND INFINFIPB80N03S4L02ATMA1 IPB80N03S4L-02INDKR 2156-IPB80N03S4L02ATMA1 SP000273282 IPB80N03S4L02ATMA1CT IPB80N03S4L02ATMA1DKR IPB80N03S4L-02INTR IPB80N03S4L-02 IPB80N03S4L02 IPB80N03S4L-02-ND
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Additional Features:	ULTRA LOW RESISTANCE

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