IPB80N06S2L09ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB80N06S2L09ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JEDEC-95 Code: TO-263AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	IPB80N06S2L09ATMA1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	370 mJ
Other Names:	IPB80N06S2L-09-ND SP000218743 IPB80N06S2L09ATMA1TR IPB80N06S2L-09
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	80 A
JEDEC-95 Code:	TO-263AB
Maximum Pulsed Drain Current (IDM):	320 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	55 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.011 ohm

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