IPB80N06S407ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB80N06S407ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 71 mJ;
Datasheet	IPB80N06S407ATMA1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	71 mJ
Other Names:	IPB80N06S4-07 IPB80N06S407ATMA1TR IPB80N06S4-07-ND 2156-IPB80N06S407ATMA1 INFINFIPB80N06S407ATMA1 SP000415568
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	80 A
JEDEC-95 Code:	TO-263AB
Maximum Pulsed Drain Current (IDM):	320 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0071 ohm
Moisture Sensitivity Level (MSL):	1

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