Infineon Technologies - IPB80N06S4L05ATMA1

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IPB80N06S4L05ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB80N06S4L05ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0048 ohm; JESD-30 Code: R-PSSO-G2; No. of Elements: 1;
Datasheet IPB80N06S4L05ATMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 152 mJ
Other Names: SP000415570
2156-IPB80N06S4L05ATMA1
IPB80N06S4L-05-ND
IPB80N06S4L05ATMA1TR
2156-IPB80N06S4L05ATMA1-ITTR-ND
IPB80N06S4L-05
INFINFIPB80N06S4L05ATMA1
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
JEDEC-95 Code: TO-263AB
Maximum Pulsed Drain Current (IDM): 320 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0048 ohm
Moisture Sensitivity Level (MSL): 1
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