IPB90R340C3ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB90R340C3ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .34 ohm; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 900 V;
Datasheet	IPB90R340C3ATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	15 A
Maximum Pulsed Drain Current (IDM):	34 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.34 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	678 mJ
Other Names:	IPB90R340C3ATMA1CT 2156-IPB90R340C3ATMA1TR IPB90R340C3ATMA1TR IPB90R340C3ATMA1DKR SP000944226
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	900 V

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