Infineon Technologies - IPD090N03LGBTMA1

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IPD090N03LGBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD090N03LGBTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JEDEC-95 Code: TO-252; Operating Mode: ENHANCEMENT MODE;
Datasheet IPD090N03LGBTMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 40 mJ
Other Names: SP000236950
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 40 A
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 280 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 30 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0135 ohm
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