Infineon Technologies - IPD096N08N3GBTMA1

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IPD096N08N3GBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD096N08N3GBTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 90 mJ; Case Connection: DRAIN;
Datasheet IPD096N08N3GBTMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 73 A
Maximum Pulsed Drain Current (IDM): 292 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0096 ohm
Avalanche Energy Rating (EAS): 90 mJ
Other Names: IPD096N08N3GBTMA1TR
IPD096N08N3 G-ND
2156-IPD096N08N3GBTMA1-ITTR-ND
IPD096N08N3 G
SP000474196
2156-IPD096N08N3GBTMA1
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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