Infineon Technologies - IPD105N03LGATMA1

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IPD105N03LGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD105N03LGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
Datasheet IPD105N03LGATMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 35 A
Maximum Pulsed Drain Current (IDM): 245 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0105 ohm
Avalanche Energy Rating (EAS): 30 mJ
Other Names: IPD105N03LGINCT
IPD105N03LGATMA1TR
IPD105N03LGXT
IPD105N03L G
IPD105N03LGATMA1DKR
IPD105N03LGINDKR-ND
SP000254717
IPD105N03LGINDKR
IPD105N03LGINTR
IPD105N03LGINCT-ND
IPD105N03LGATMA1CT
IPD105N03LG
IPD105N03LGINTR-ND
SP000796910
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): NOT SPECIFIED
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