Infineon Technologies - IPD127N06LGBTMA1

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IPD127N06LGBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD127N06LGBTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 240 mJ; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IPD127N06LGBTMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0127 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 240 mJ
Other Names: IPD127N06LGBTMA1TR
IPD127N06LGINTR-ND
IPD127N06LGINTR
IPD127N06LGXT
IPD127N06LGINDKR
SP000204177
IPD127N06LGBTMA1CT
SP000443740
IPD127N06LGINCT
IPD127N06LG
IPD127N06LGBTMA1DKR
IPD127N06LGINDKR-ND
IPD127N06LGINCT-ND
IPD127N06L G
IPD127N06L G-ND
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
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