IPD135N03LGXT by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD135N03LGXT
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
Datasheet	IPD135N03LGXT Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	210 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0135 ohm
Avalanche Energy Rating (EAS):	20 mJ
Other Names:	IPD135N03LGINDKR IPD135N03LGINTR-ND IPD135N03LGINCT IPD135N03LGINTR IPD135N03LGXTTR IPD135N03LGINDKR-ND IPD135N03LG IPD135N03LGXTCT IPD135N03LGINCT-ND IPD135N03LGXTDKR
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C):	NOT SPECIFIED

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