IPD135N08N3GBTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD135N08N3GBTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
Datasheet	IPD135N08N3GBTMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	45 A
Maximum Pulsed Drain Current (IDM):	180 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0135 ohm
Avalanche Energy Rating (EAS):	50 mJ
Other Names:	SP000454266 IPD135N08N3GBTMA1TR IPD135N08N3 G IPD135N08N3 G-ND
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	80 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

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