IPD144N06NGBTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD144N06NGBTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Avalanche Energy Rating (EAS): 240 mJ; JESD-30 Code: R-PSSO-G2;
Datasheet	IPD144N06NGBTMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	50 A
Maximum Pulsed Drain Current (IDM):	200 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0144 ohm
Avalanche Energy Rating (EAS):	240 mJ
Other Names:	IPD144N06N G-ND IPD144N06N G IPD144N06NGBTMA1TR IPD144N06NGINDKR-ND IPD144N06NGINCT-ND IPD144N06NGINTR IPD144N06NG IPD144N06NGXT IPD144N06NGBTMA1DKR IPD144N06NGINTR-ND IPD144N06NGINDKR IPD144N06NGBTMA1CT SP000203941 IPD144N06NGINCT SP000443738
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	NOT SPECIFIED

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