Infineon Technologies - IPD25N06S240ATMA1

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IPD25N06S240ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD25N06S240ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Minimum DS Breakdown Voltage: 55 V; JESD-30 Code: R-PSSO-G2;
Datasheet IPD25N06S240ATMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 80 mJ
Other Names: 2156-IPD25N06S240ATMA1
SP000252164
IPD25N06S2-40-ND
IFEINFIPD25N06S240ATMA1
IPD25N06S2-40
IPD25N06S240ATMA1TR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 29 A
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 116 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 55 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .04 ohm
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