IPD26N06S2L35ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD26N06S2L35ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 55 V;
Datasheet	IPD26N06S2L35ATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	120 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.047 ohm
Avalanche Energy Rating (EAS):	80 mJ
Other Names:	SP000252165 ROCINFIPD26N06S2L35ATMA1 IPD26N06S2L-35-ND IPD26N06S2L-35 IPD26N06S2L35ATMA1TR 2156-IPD26N06S2L35ATMA1
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	55 V
Additional Features:	ULTRA LOW RESISTANCE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED

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