IPD400N06NGBTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD400N06NGBTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2; Additional Features: AVALANCHE RATED;
Datasheet	IPD400N06NGBTMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	27 A
Maximum Pulsed Drain Current (IDM):	108 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.04 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	80 mJ
Other Names:	IPD400N06N G-ND IPD400N06NGBTMA1CT IPD400N06NGINTR IPD400N06NGINTR-ND IPD400N06NGBTMA1TR SP000443744 IPD400N06NGBTMA1DKR IPD400N06NGINDKR-ND IPD400N06NGXT IPD400N06N G SP000203938 IPD400N06NG IPD400N06NGINCT-ND IPD400N06NGINDKR IPD400N06NGINCT
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED

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