IPD50N06S214ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD50N06S214ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Reference Standard: AEC-Q101; Transistor Element Material: SILICON;
Datasheet	IPD50N06S214ATMA1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	240 mJ
Other Names:	IPD50N06S214ATMA1TR 2156-IPD50N06S214ATMA1 SP000252171 IPD50N06S2-14 INFINFIPD50N06S214ATMA1 IPD50N06S2-14-ND
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	50 A
JEDEC-95 Code:	TO-252
Maximum Pulsed Drain Current (IDM):	200 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	55 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	ULTRA-LOW RESISTANCE
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0144 ohm

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