Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPD50N06S4L12ATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .012 ohm; |
| Datasheet | IPD50N06S4L12ATMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 50 A |
| Maximum Pulsed Drain Current (IDM): | 200 A |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .012 ohm |
| Avalanche Energy Rating (EAS): | 33 mJ |
| Other Names: |
IPD50N06S4L-12-ND INFINFIPD50N06S4L12ATMA1 2156-IPD50N06S4L12ATMA1-ITTR IPD50N06S4L12ATMA1CT IPD50N06S4L12ATMA1DKR IPD50N06S4L12ATMA1TR SP000476422 IPD50N06S4L-12 IPD50N06S4L12DTMA1 |
| JEDEC-95 Code: | TO-252 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
