IPD50P03P4L11ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD50P03P4L11ATMA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Avalanche Energy Rating (EAS): 100 mJ; No. of Terminals: 2;
Datasheet	IPD50P03P4L11ATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	50 A
Maximum Pulsed Drain Current (IDM):	200 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0105 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	100 mJ
Other Names:	IPD50P03P4L-11INDKR 2156-IPD50P03P4L11ATMA1 IPD50P03P4L-11INCT-ND IPD50P03P4L11ATMA1CT IPD50P03P4L-11INCT IPD50P03P4L11ATMA1DKR IPD50P03P4L11ATMA1TR IPD50P03P4L11 IPD50P03P4L-11INTR-ND SP000396290 IPD50P03P4L-11 IPD50P03P4L-11INTR IPD50P03P4L-11-ND IPD50P03P4L-11INDKR-ND INFINFIPD50P03P4L11ATMA1
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Reference Standard:	AEC-Q101

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