Infineon Technologies - IPD50R280CEBTMA1

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IPD50R280CEBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD50R280CEBTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 42.9 A;
Datasheet IPD50R280CEBTMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 231 mJ
Other Names: IPD50R280CEINDKR
IPD50R280CEINCT-ND
IPD50R280CEIN
IPD50R280CEINCT
IPD50R280CEBTMA1CT
IPD50R280CEINTR-ND
-IPD50R280CE
IPD50R280CEBTMA1DKR
IPD50R280CEINDKR-ND
IPD50R280CEBTMA1TR
IPD50R280CEIN-ND
IPD50R280CE
SP000992082
IPD50R280CEINTR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 42.9 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 500 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .28 ohm
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