Infineon Technologies - IPD50R380CEATMA1

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IPD50R380CEATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD50R380CEATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 173 mJ; Package Shape: RECTANGULAR;
Datasheet IPD50R380CEATMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 173 mJ
Other Names: IPD50R380CEATMA1CT
SP001117698
IPD50R380CEATMA1DKR
IPD50R380CEATMA1-ND
IPD50R380CEATMA1TR
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 32.4 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 500 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .38 ohm
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