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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPD50R650CEBTMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Position: SINGLE; Transistor Application: SWITCHING; |
| Datasheet | IPD50R650CEBTMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 6.1 A |
| Maximum Pulsed Drain Current (IDM): | 19 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .65 ohm |
| Avalanche Energy Rating (EAS): | 102 mJ |
| Other Names: |
SP000992078 IPD50R650CECT-ND ROCINFIPD50R650CEBTMA1 IPD50R650CEBTMA1CT IPD50R650CECT IPD50R650CETR-ND 2156-IPD50R650CEBTMA1 IPD50R650CEBTMA1DKR IPD50R650CEDKR-ND -IPD50R650CE IPD50R650CEBTMA1TR IPD50R650CE IPD50R650CETR IPD50R650CEDKR |
| JEDEC-95 Code: | TO-252AA |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 500 V |
| Maximum Drain Current (Abs) (ID): | 6.1 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
