IPD60R385CPBTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD60R385CPBTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
Datasheet	IPD60R385CPBTMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	9 A
Maximum Pulsed Drain Current (IDM):	27 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.385 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	227 mJ
Other Names:	IPD60R385CPBTMA1CT IPD60R385CPINCT IPD60R385CPINCT-ND IPD60R385CPINDKR IPD60R385CPINDKR-ND IPD60R385CP-ND IPD60R385CPINTR-ND IPD60R385CPBTMA1DKR SP000307381 IPD60R385CPXT SP000062533 IPD60R385CP IPD60R385CPINTR IPD60R385CPBTMA1TR
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

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