Infineon Technologies - IPD60R450E6ATMA1

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IPD60R450E6ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD60R450E6ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 185 mJ; Transistor Application: SWITCHING; No. of Terminals: 2;
Datasheet IPD60R450E6ATMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 185 mJ
Other Names: IPD60R450E6ATMA1TR
SP001117720
IPD60R450E6ATMA1CT
2156-IPD60R450E6ATMA1
INFINFIPD60R450E6ATMA1
IPD60R450E6ATMA1-ND
2156-IPD60R450E6ATMA1-ITTR-ND
IPD60R450E6ATMA1DKR
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 26 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .45 ohm
Moisture Sensitivity Level (MSL): 1
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