Infineon Technologies - IPD60R450E6BTMA1

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IPD60R450E6BTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD60R450E6BTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Position: SINGLE; Qualification: Not Qualified;
Datasheet IPD60R450E6BTMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Pulsed Drain Current (IDM): 26 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .45 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 185 mJ
Other Names: IPD60R450E6
IPD60R450E6BTMA1CT
IPD60R450E6CT-ND
IPD60R450E6DKR
IPD60R450E6BTMA1TR
IPD60R450E6DKR-ND
IPD60R450E6-ND
IPD60R450E6CT
IPD60R450E6BTMA1DKR
IPD60R450E6TR-ND
SP000801092
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
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