Infineon Technologies - IPD60R750E6BTMA1

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IPD60R750E6BTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD60R750E6BTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-30 Code: R-PSSO-G2; Transistor Application: SWITCHING;
Datasheet IPD60R750E6BTMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Pulsed Drain Current (IDM): 15.7 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .75 ohm
Avalanche Energy Rating (EAS): 72 mJ
Other Names: 2156-IPD60R750E6BTMA1
INFINFIPD60R750E6BTMA1
IPD60R750E6CT
IPD60R750E6
IPD60R750E6BTMA1TR
IPD60R750E6DKR
IPD60R750E6DKR-ND
IPD60R750E6-ND
IPD60R750E6CT-ND
IPD60R750E6TR-ND
SP000801094
IPD60R750E6BTMA1DKR
IPD60R750E6BTMA1CT
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
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