IPD65R250C6XTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD65R250C6XTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-252; JESD-609 Code: e3;
Datasheet	IPD65R250C6XTMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Pulsed Drain Current (IDM):	46 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.25 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	290 mJ
Other Names:	IPD65R250C6XTMA1CT ROCINFIPD65R250C6XTMA1 2156-IPD65R250C6XTMA1 IPD65R250C6XTMA1DKR IPD65R250C6XTMA1TR SP000898654
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	650 V

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