IPD70P04P409ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD70P04P409ATMA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Avalanche Energy Rating (EAS): 24 mJ; Terminal Form: GULL WING;
Datasheet	IPD70P04P409ATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	73 A
Maximum Pulsed Drain Current (IDM):	292 A
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0089 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	24 mJ
Other Names:	SP000709326 IPD70P04P409ATMA1TR IPD70P04P409ATMA1-ND IPD70P04P409ATMA1CT IPD70P04P409ATMA1DKR
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED

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