IPD78CN10NGBUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD78CN10NGBUMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified; Transistor Element Material: SILICON;
Datasheet	IPD78CN10NGBUMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	13 A
Maximum Pulsed Drain Current (IDM):	52 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.078 ohm
Avalanche Energy Rating (EAS):	17 mJ
Other Names:	IPD78CN10N G-ND SP000096460 IPD78CN10NGBUMA1DKR IPD78CN10N GTR-ND IPD78CN10NGBUMA1CT IFEINFIPD78CN10NGBUMA1 2156-IPD78CN10NGBUMA1 IPD78CN10N GDKR IPD78CN10NG IPD78CN10N G IPD78CN10N GCT IPD78CN10N GDKR-ND IPD78CN10N GCT-ND IPD78CN10NGBUMA1TR
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

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