IPD800N06NGBTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD800N06NGBTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 43 mJ; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	IPD800N06NGBTMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	16 A
Maximum Pulsed Drain Current (IDM):	64 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.08 ohm
Avalanche Energy Rating (EAS):	43 mJ
Other Names:	2156-IPD800N06NGBTMA1-ITTR-ND IPD800N06NGINCT-ND IPD800N06NGINDKR-ND IPD800N06NGXT IPD800N06NGBTMA1CT IPD800N06N G IPD800N06NGINTR-ND INFINFIPD800N06NGBTMA1 IPD800N06NGINTR IPD800N06NGINDKR SP000204179 IPD800N06NGINCT IPD800N06N G-ND SP000443764 IPD800N06NGBTMA1TR IPD800N06NGBTMA1DKR IPD800N06NG 2156-IPD800N06NGBTMA1
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	NOT SPECIFIED

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