Infineon Technologies - IPI100N08N3GHKSA1

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IPI100N08N3GHKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPI100N08N3GHKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 90 mJ; JESD-30 Code: R-PSIP-T3;
Datasheet IPI100N08N3GHKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 90 mJ
Other Names: SP000474192
IPI100N08N3 G-ND
IPI100N08N3 G
SP000680710
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 70 A
JEDEC-95 Code: TO-262AA
Maximum Pulsed Drain Current (IDM): 280 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 80 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .01 ohm
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