Infineon Technologies - IPI50R250CPXKSA1

  1. Home
  2. Infineon Technologies - IPI50R250CPXKSA1
IPI50R250CPXKSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IPI50R250CPXKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 13 A; Minimum DS Breakdown Voltage: 500 V; Terminal Position: SINGLE;
Datasheet IPI50R250CPXKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 13 A
Maximum Pulsed Drain Current (IDM): 31 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .25 ohm
Avalanche Energy Rating (EAS): 345 mJ
Other Names: IFEINFIPI50R250CPXKSA1
2156-IPI50R250CPXKSA1-IT
SP000523750
IPI50R250CP
IPI50R250CP-ND
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRFB4227PBF by International Rectifier

IRFB4227PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
IRFR5505TRPBF by Infineon Technologies

IRFR5505TRPBF

Infineon Technologies

IRFR5505TRPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 64A IDM, 150mJ EAS, and 0.11 ohm RDS(ON). With a max power dissipation of 57W and operating temperature up to 150°C, it's suitable for high-power circuits requiring efficient switching capabilities.
DMPH3010LK3-13 by Diodes Incorporated

DMPH3010LK3-13

Diodes Incorporated

Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
IRFP460 by Vishay Siliconix

IRFP460

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain Current (ID): 20 A; No. of Terminals: 3;
IRFP460 by Vishay Intertechnology

IRFP460

Vishay Intertechnology

Vishay Intertechnology's IRFP460 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at up to 150°C.
FDPF10N60NZ by Onsemi

FDPF10N60NZ

Onsemi

FDPF10N60NZ by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 40A and EAS of 550mJ. With a 0.75 ohm RDS(on), this transistor operates in ENHANCEMENT MODE up to 150°C, making it suitable for high-power switching circuits.
IRFH4251DTRPBF by Infineon Technologies

IRFH4251DTRPBF

Infineon Technologies

IRFH4251DTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 25V DS Breakdown Voltage. It features SERIES CONNECTED, CENTER TAP configuration and 120A Max Pulsed Drain Current. Ideal for SWITCHING applications, this transistor has a 0.0046 ohm Max Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
SI4946BEY-T1-E3 by Vishay Siliconix

SI4946BEY-T1-E3

Vishay Siliconix

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Maximum Drain-Source On Resistance: .041 ohm; JESD-30 Code: R-PDSO-G8;
BSC011N03LSTATMA1 by Infineon Technologies

BSC011N03LSTATMA1

Infineon Technologies

Infineon's BSC011N03LSTATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0014 ohm RDS(on), and 190mJ EAS. Its small outline package and DUAL terminals make it suitable for high-power ENHANCEMENT MODE operations.
JANTX2N6796U by International Rectifier

JANTX2N6796U

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Turn On Time (ton): 105 ns; Maximum Power Dissipation Ambient: 25 W;
IRFZ44NS by Transys Electronics

IRFZ44NS

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING; No. of Terminals: 2;
IRFL9014TRPBF by Vishay Intertechnology

IRFL9014TRPBF

Vishay Intertechnology

Vishay Intertechnology's IRFL9014TRPBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 3.1W.
FQB22P10TM by Fairchild Semiconductor

FQB22P10TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Elements: 1; Terminal Finish: MATTE TIN;
JANTX2N6796 by Defense Logistics Agency

JANTX2N6796

Defense Logistics Agency

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .18 ohm; Maximum Pulsed Drain Current (IDM): 32 A; Package Body Material: METAL;
IRF540PBF by International Rectifier

IRF540PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 230 mJ; JESD-609 Code: e3;
CSD18563Q5A-P by Texas Instruments

CSD18563Q5A-P

Texas Instruments

CSD18563Q5A-P by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 251A IDM, and 0.0108 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching tasks in various electronic devices.
STP55NF06 by STMicroelectronics

STP55NF06

STMicroelectronics

STP55NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
DMP4051LK3-13 by Diodes Incorporated

DMP4051LK3-13

Diodes Incorporated

DMP4051LK3-13 by Diodes Inc. is a P-CHANNEL FET with 40V DS Breakdown Voltage, 28.9A IDM, and 0.051 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages, operating at up to 150°C with single terminal position and built-in diode.
IRF7424TRPBF by Infineon Technologies

IRF7424TRPBF

Infineon Technologies

Infineon's IRF7424TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 11A Drain Current, and 0.0135 ohm On Resistance. Ideal for power applications in electronics due to its 2.5W Power Dissipation, -55 to 150°C Operating Temperature range, and compact SINGLE configuration for surface mount assembly.
IRF7342TRPBF by International Rectifier

IRF7342TRPBF

International Rectifier

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1;