IPI50R299CPXKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPI50R299CPXKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 26 A;
Datasheet	IPI50R299CPXKSA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	26 A
Surface Mount:	NO
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.299 ohm
Avalanche Energy Rating (EAS):	289 mJ
Other Names:	IPI50R299CP-ND 2156-IPI50R299CPXKSA1-IT SP000523748 IPI50R299CP IFEINFIPI50R299CPXKSA1
JEDEC-95 Code:	TO-262AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

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