IPI70N04S406AKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPI70N04S406AKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Minimum DS Breakdown Voltage: 40 V; Maximum Pulsed Drain Current (IDM): 280 A;
Datasheet	IPI70N04S406AKSA1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	72 mJ
Other Names:	INFINFIPI70N04S406AKSA1 2156-IPI70N04S406AKSA1 SP000711484 IPI70N04S4-06 IPI70N04S4-06-ND
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	70 A
JEDEC-95 Code:	TO-262AA
Maximum Pulsed Drain Current (IDM):	280 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	40 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.0065 ohm

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