Infineon Technologies - IPI80N04S306AKSA1

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IPI80N04S306AKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPI80N04S306AKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 320 A; Package Style (Meter): IN-LINE; No. of Terminals: 3;
Datasheet IPI80N04S306AKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 125 mJ
Other Names: IPI80N04S3-06
IPI80N04S3-06-ND
SP000261237
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
JEDEC-95 Code: TO-262AA
Maximum Pulsed Drain Current (IDM): 320 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA LOW RESISTANCE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .0057 ohm
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