Infineon Technologies - IPI90R500C3XKSA1

IPI90R500C3XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPI90R500C3XKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 11 A; JESD-30 Code: R-PSIP-T3; Transistor Application: SWITCHING;
Datasheet IPI90R500C3XKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 24 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .5 ohm
Avalanche Energy Rating (EAS): 388 mJ
Other Names: SP000413728
IPI90R500C3
IPI90R500C3-ND
SP000683084
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 900 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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