IPLU300N04S4R7XTMA2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPLU300N04S4R7XTMA2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Reference Standard: AEC-Q101; Maximum Pulsed Drain Current (IDM): 1200 A;
Datasheet	IPLU300N04S4R7XTMA2 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	300 A
Maximum Pulsed Drain Current (IDM):	1200 A
Surface Mount:	YES
No. of Terminals:	8
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.00076 ohm
Avalanche Energy Rating (EAS):	750 mJ
Other Names:	SP001097228
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	40 V
Additional Features:	ULTRA LOW RESISTANCE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED

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