Infineon Technologies - IPP041N12N3GXKSA1

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IPP041N12N3GXKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP041N12N3GXKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .0041 ohm; Maximum Drain Current (ID): 120 A;
Datasheet IPP041N12N3GXKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 480 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0041 ohm
Avalanche Energy Rating (EAS): 900 mJ
Other Names: SP000652746
IPP041N12N3 G
IPP041N12N3 G-ND
IPP041N12N3GXKSA1-ND
448-IPP041N12N3GXKSA1
IPP041N12N3G
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 120 V
Qualification: Not Qualified
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