Infineon Technologies - IPP100N04S2L03AKSA1

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IPP100N04S2L03AKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP100N04S2L03AKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
Datasheet IPP100N04S2L03AKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 810 mJ
Other Names: INFINFIPP100N04S2L03AKSA1
2156-IPP100N04S2L03AKSA1-IT
IPP100N04S2L-03-ND
SP000219062
IPP100N04S2L-03
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 100 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 400 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .0033 ohm
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