Infineon Technologies - IPP80N04S303AKSA1

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IPP80N04S303AKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP80N04S303AKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Pulsed Drain Current (IDM): 320 A; Terminal Form: THROUGH-HOLE;
Datasheet IPP80N04S303AKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .0035 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 526 mJ
Other Names: 2156-IPP80N04S303AKSA1-IT
IPP80N04S303
IPP80N04S3-03-ND
IPP80N04S3-03
SP000261229
IFEINFIPP80N04S303AKSA1
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Additional Features: ULTRA LOW RESISTANCE
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