Infineon Technologies - IPP80N04S306AKSA1

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IPP80N04S306AKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP80N04S306AKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 125 mJ; Moisture Sensitivity Level (MSL): 1;
Datasheet IPP80N04S306AKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 125 mJ
Other Names: IPP80N04S306
IPP80N04S3-06-ND
INFINFIPP80N04S306AKSA1
IPP80N04S3-06
SP000261233
2156-IPP80N04S306AKSA1-IT
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 320 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA LOW RESISTANCE
Maximum Drain-Source On Resistance: .0057 ohm
Moisture Sensitivity Level (MSL): 1
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