Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPP80N04S3H4AKSA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | IPP80N04S3H4AKSA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 370 mJ |
| Other Names: |
IPP80N04S3-H4 IPP80N04S3-H4-ND SP000415702 |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 80 A |
| JEDEC-95 Code: | TO-220AB |
| Maximum Pulsed Drain Current (IDM): | 320 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 40 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .0048 ohm |
