Infineon Technologies - IPP80N06S205AKSA1

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IPP80N06S205AKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP80N06S205AKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 80 A; Avalanche Energy Rating (EAS): 810 mJ;
Datasheet IPP80N06S205AKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0051 ohm
Avalanche Energy Rating (EAS): 810 mJ
Other Names: IPP80N06S2-05
IPP80N06S2-05-ND
SP000218873
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 55 V
Additional Features: ULTRA-LOW RESISTANCE
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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