Infineon Technologies - IPP80N06S2H5AKSA1

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IPP80N06S2H5AKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP80N06S2H5AKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 80 A; Maximum Pulsed Drain Current (IDM): 320 A; Minimum DS Breakdown Voltage: 55 V;
Datasheet IPP80N06S2H5AKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 700 mJ
Other Names: IPP80N06S2-H5
SP000218155
IPP80N06S2-H5-ND
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 320 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 55 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .0055 ohm
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