Infineon Technologies - IPS090N03LGAKMA1

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IPS090N03LGAKMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPS090N03LGAKMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 70 mJ; Qualification: Not Qualified; JESD-609 Code: e3;
Datasheet IPS090N03LGAKMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 280 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0135 ohm
Avalanche Energy Rating (EAS): 70 mJ
Other Names: IPS090N03LGIN-ND
IPS090N03L G
IPS090N03LGXK
IPS090N03LGIN
2156-IPS090N03LGAKMA1-IT
INFINFIPS090N03LGAKMA1
SP000788216
JEDEC-95 Code: TO-251
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
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