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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPS105N03LGAKMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; No. of Elements: 1; No. of Terminals: 3; |
| Datasheet | IPS105N03LGAKMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 35 A |
| Maximum Pulsed Drain Current (IDM): | 245 A |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0105 ohm |
| Avalanche Energy Rating (EAS): | 30 mJ |
| Other Names: |
INFINFIPS105N03LGAKMA1 IPS105N03LG 2156-IPS105N03LGAKMA1-IT IPS105N03LGIN-ND SP000264172 IPS105N03LGXK IPS105N03L G IPS105N03LGIN SP000788218 |
| JEDEC-95 Code: | TO-251 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
