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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPS60R2K1CEAKMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-251; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN; |
| Datasheet | IPS60R2K1CEAKMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 11 mJ |
| Other Names: |
SP001471270 ROCINFIPS60R2K1CEAKMA1 2156-IPS60R2K1CEAKMA1 |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| JEDEC-95 Code: | TO-251 |
| Maximum Pulsed Drain Current (IDM): | 6 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 600 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 2.1 ohm |
